inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 1 isc n-channel mosfet transistor 2SK858 description drain current C i d =2a@ t c =25 drain source voltage- : v dss =600v(min) applications designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. absolute maximum ratings(t a =25 ) symbol arameter value unit v dss drain-source voltage (v gs =0) 600 v v gs gate-source voltage 20 v i d drain current-continuous@ tc=25 2 a p tot total dissipation@tc=25 40 w t j max. operating junction temperature 150 t stg storage temperature range -55~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 1.67 /w r th j-a thermal resistance,junction to ambient 62.5 /w pdf pdffactory pro www.fineprint.cn
inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 2 isc n-channel mosfet transistor 2SK858 electrical characteristics (t c =25 ) symbol parameter conditions min typ. max unit v (br)dss drain-source breakdown voltage v gs =0; i d = 10ma 600 v v gs(th) gate threshold voltage v ds =0; i d = 1ma 2.0 4.0 v r ds(on) drain-source on-stage resistance v gs = 10v; i d =1a 4.0 i gss gate source leakage current v gs = 20v; v ds = 0 100 na i dss zero gate voltage drain current v ds =600v; v gs = 0 0.1 ma pdf pdffactory pro www.fineprint.cn
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